RE: F21/P21 "improvements"
- To: Lonnie Reed <Lonnie.Reed@xxxxxxxxxxx>, misc, Jfox@xxxxxxxxx
- Subject: RE: F21/P21 "improvements"
- From: "M. Simon" <msimon@xxxxxxx>
- Date: Tue, 06 Jun 2000 06:04:35 -0700
- In-Reply-To: <200006052351.QAA08588@tellurian.Eng.Sun.COM>
>
>Basically it is made of a film of the same stuff CD-RW is made of, but it
>is electrically read/written to and has higher density than optical
>read/write.
>
>You can check it out at:
>http://www.ovonyx.com/tech_html.html
>
>Lonnie
This memory has a wearout mechanism. 1e13 cycles.
A given location would be able to sustain about 300,000 hits a second for
10 years.
This technology has a ways to go before it replaces DRAM or SRAM.
It looks a lot like FRAM technology.
Simon
